FDB6021P
RoHS

FDB6021P

FDB6021P

onsemi

MOSFET P-CH 20V 28A TO263AB

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FDB6021P

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Products Specifications
Vgs(th) (Max) @ Id1.5V @ 250µA
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-263AB
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs30 mOhm @ 14A, 4.5V
Power Dissipation (Max)37W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1890pF @ 10V
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionP-Channel 20V 28A (Ta) 37W (Tc) Surface Mount TO-263AB
Current - Continuous Drain (Id) @ 25°C28A (Ta)