FDD6680AS
RoHS

FDD6680AS

FDD6680AS

onsemi

MOSFET N-CH 30V 55A TO252

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FDD6680AS

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Products Specifications
Vgs(th) (Max) @ Id3V @ 1mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-252
SeriesPowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs10.5 mOhm @ 12.5A, 10V
Power Dissipation (Max)60W (Ta)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFDD6680AS-ND FDD6680ASFSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time42 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 55A (Ta) 60W (Ta) Surface Mount TO-252
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Base Part NumberFDD6680