FQP12P20
RoHS

FQP12P20

FQP12P20

onsemi

MOSFET P-CH 200V 11.5A TO220-3

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FQP12P20

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Products Specifications
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesQFET®
Rds On (Max) @ Id, Vgs470 mOhm @ 5.75A, 10V
Power Dissipation (Max)120W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time8 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionP-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)