SI1441EDH-T1-GE3
| Part No | SI1441EDH-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 4A SOT-363 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18350
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5049 | |
| 10 | 0.4948 | |
| 100 | 0.4797 | |
| 1000 | 0.4645 | |
| 10000 | 0.4443 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 7.512624 mg |
| Lead Free | Lead Free |
| REACH SVHC | Unknown |
| Rds On Max | 41 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | -400 mV |
| Case/Package | SOT-363 |
| Number of Pins | 6 |
| Power Dissipation | 1.6 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 41 mΩ |
| Gate to Source Voltage (Vgs) | 10 V |
| Continuous Drain Current (ID) | 4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | -20 V |
