SI2304BDS-T1-GE3
RoHS

SI2304BDS-T1-GE3

SI2304BDS-T1-GE3

Vishay

MOSFET N-CH 30V 2.6A SOT23-3

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SI2304BDS-T1-GE3

Availability: 22950 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time12.5 ns
Lead FreeLead Free
Rise Time12.5 ns
REACH SVHCUnknown
Rds On Max70 mΩ
Resistance70 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance225 pF
Power Dissipation750 mW
Threshold Voltage2.25 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7.5 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance55 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V