SI2347DS-T1-GE3
RoHS

SI2347DS-T1-GE3

SI2347DS-T1-GE3

Vishay

MOSFET P-CH 30V 5A SOT-23

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SI2347DS-T1-GE3

Availability: 20087 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time9 ns
Lead FreeLead Free
Rise Time6 ns
REACH SVHCNo SVHC
Rds On Max42 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Input Capacitance705 pF
Power Dissipation1.7 W
Threshold Voltage-2.5 V
Number of Channels1
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance68 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V