SI3424BDV-T1-E3
RoHS

SI3424BDV-T1-E3

SI3424BDV-T1-E3

Vishay

MOSFET N-CH 30V 8A 6TSOP

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SI3424BDV-T1-E3

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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time12 ns
Rise Time85 ns
REACH SVHCUnknown
Rds On Max28 mΩ
Nominal Vgs3 V
Case/PackageTSOP
Number of Pins6
Input Capacitance735 pF
Power Dissipation2.1 W
Threshold Voltage3 V
Number of Elements1
Turn-On Delay Time18 ns
Radiation HardeningNo
Turn-Off Delay Time17 ns
Element ConfigurationSingle
Max Power Dissipation2.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V