SI3459BDV-T1-GE3
| Part No | SI3459BDV-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 60V 2.9A 6-TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17255
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.664 | |
| 10 | 0.6507 | |
| 100 | 0.6308 | |
| 1000 | 0.6109 | |
| 10000 | 0.5843 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65 mm |
| Height | 1 mm |
| Length | 3.05 mm |
| Weight | 19.986414 mg |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Rise Time | 12 ns |
| REACH SVHC | Unknown |
| Rds On Max | 216 mΩ |
| Resistance | 216 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | -3 V |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Input Capacitance | 350 pF |
| Power Dissipation | 2 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.3 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 180 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -2.9 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -60 V |
| Drain to Source Breakdown Voltage | -60 V |
