SI3460DV-T1-E3
RoHS

SI3460DV-T1-E3

SI3460DV-T1-E3

Vishay

MOSFET N-CH 20V 5.1A 6TSOP

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SI3460DV-T1-E3

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Products Specifications
Vgs(th) (Max) @ Id450mV @ 1mA (Min)
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package6-TSOP
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs27 mOhm @ 5.1A, 4.5V
Power Dissipation (Max)1.1W (Ta)
PackagingOriginal-Reel®
Package / CaseSOT-23-6 Thin, TSOT-23-6
Other NamesSI3460DV-T1-E3DKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionN-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C5.1A (Ta)