SI3865DDV-T1-GE3
RoHS

SI3865DDV-T1-GE3

SI3865DDV-T1-GE3

Vishay

SI3865DDV-T1-GE3 Dual N/P-channel SiC MOSFET Transistor; 2.8 A; 12 V; 6-Pin TSOP

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SI3865DDV-T1-GE3

Availability: 21020 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Width1.7 mm
Height1 mm
Length3.1 mm
Weight19.986414 mg
InterfaceOn/Off
Lead FreeLead Free
PackagingCut Tape
REACH SVHCNo SVHC
Resistance165 mΩ
Case/PackageTSOP
Current Rating2.8 A
Number of Pins6
Output Current1 A
Number of Outputs1
Power Dissipation830 mW
Max Output Current2.8 A
Max Supply Voltage12 V
Min Supply Voltage1.5 V
Number of Channels1
Radiation HardeningNo
Output ConfigurationHigh Side
Max Power Dissipation830 mW
Nominal Input Voltage12 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C