SI4463BDY-T1-E3
RoHS

SI4463BDY-T1-E3

SI4463BDY-T1-E3

Vishay

MOSFET P-CH 20V 9.8A 8-SOIC

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SI4463BDY-T1-E3

Availability: 19360 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time60 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time60 ns
REACH SVHCNo SVHC
Rds On Max11 mΩ
Resistance11 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Contact PlatingTin
Power Dissipation1.5 W
Threshold Voltage-1.4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time35 ns
Turn-Off Delay Time115 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)9.8 A
Drain to Source Voltage (Vdss)-20 V