SI4477DY-T1-GE3
| Part No | SI4477DY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 26.6A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22046
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.316 | |
| 10 | 1.2897 | |
| 100 | 1.2502 | |
| 1000 | 1.2107 | |
| 10000 | 1.1581 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 42 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 42 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 6.2 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SO |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 4.6 nF |
| Power Dissipation | 3 W |
| Threshold Voltage | -1.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 42 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100 ns |
| Max Power Dissipation | 3 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6.2 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | -26.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | -20 V |
