SI4686DY-T1-GE3
| Part No | SI4686DY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 18.2A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
23163
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5 | |
| 10 | 1.47 | |
| 100 | 1.425 | |
| 1000 | 1.38 | |
| 10000 | 1.32 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 8 ns |
| Rise Time | 20 ns |
| Rds On Max | 9.5 mΩ |
| Nominal Vgs | 3 V |
| Case/Package | SO |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 1.22 nF |
| Power Dissipation | 3 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Max Power Dissipation | 3 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 9.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 13.8 A |
| Drain to Source Voltage (Vdss) | 30 V |
