SI7116DN-T1-E3
| Part No | SI7116DN-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 40V 10.5A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16129
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.279 | |
| 10 | 2.2334 | |
| 100 | 2.165 | |
| 1000 | 2.0967 | |
| 10000 | 2.0055 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05 mm |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Fall Time | 15 ns |
| Lead Free | Lead Free |
| Rise Time | 15 ns |
| REACH SVHC | Unknown |
| Rds On Max | 7.8 mΩ |
| Resistance | 7.8 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Power Dissipation | 1.5 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 10.5 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 40 V |
