SI7120ADN-T1-GE3
| Part No | SI7120ADN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 6A 1212-8 PPAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18265
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.616 | |
| 10 | 1.5837 | |
| 100 | 1.5352 | |
| 1000 | 1.4867 | |
| 10000 | 1.4221 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Fall Time | 12 ns |
| Lead Free | Lead Free |
| Rise Time | 12 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 21 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Power Dissipation | 1.5 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 21 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 9.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
