SI7121DN-T1-GE3
RoHS

SI7121DN-T1-GE3

SI7121DN-T1-GE3

Vishay

MOSFET P-CH 30V 16A 1212-8

Download Datasheet

SI7121DN-T1-GE3

Availability: 35192 pieces
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time15 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time100 ns
REACH SVHCNo SVHC
Rds On Max18 mΩ
Resistance18 mΩ
Schedule B8541290080
Nominal Vgs-3 V
TerminationSMD/SMT
Number of Pins8
Contact PlatingTin
Input Capacitance1.96 nF
Power Dissipation3.7 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time44 ns
Dual Supply Voltage30 V
Radiation HardeningNo
Turn-Off Delay Time28 ns
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)25 V
Continuous Drain Current (ID)10.6 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage-30 V