SI7634BDP-T1-GE3
RoHS

SI7634BDP-T1-GE3

SI7634BDP-T1-GE3

Vishay

MOSFET N-CH 30V 40A PPAK SO-8

Download Datasheet

SI7634BDP-T1-GE3

Availability: 15957 pieces
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max5.4 mΩ
Resistance5.4 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance3.15 nF
Power Dissipation5 W
Threshold Voltage1.4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time30 ns
Radiation HardeningNo
Turn-Off Delay Time34 ns
Element ConfigurationSingle
Max Power Dissipation48 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance54 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)22.5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V