SI7682DP-T1-E3
| Part No | SI7682DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
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| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Fall Time | 10 ns |
| Lead Free | Lead Free |
| Rise Time | 82 ns |
| Rds On Max | 9 mΩ |
| Resistance | 9 mΩ |
| Number of Pins | 8 |
| Input Capacitance | 1.595 nF |
| Power Dissipation | 5 W |
| Number of Elements | 1 |
| Turn-On Delay Time | 18 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18 ns |
| Element Configuration | Single |
| Max Power Dissipation | 27.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 9 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 17.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
