SI7686DP-T1-GE3
| Part No | SI7686DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 35A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22957
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3984 | |
| 10 | 1.3704 | |
| 100 | 1.3285 | |
| 1000 | 1.2865 | |
| 10000 | 1.2306 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 8 ns |
| Rise Time | 16 ns |
| REACH SVHC | Unknown |
| Rds On Max | 9.5 mΩ |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Input Capacitance | 1.22 nF |
| Power Dissipation | 5 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 9.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 17.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
