SI7726DN-T1-GE3
RoHS

SI7726DN-T1-GE3

SI7726DN-T1-GE3

Vishay

MOSFET N-CH 30V 35A 1212-8

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SI7726DN-T1-GE3

Availability: 23138 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time14 ns
Rise Time10 ns
Rds On Max9.5 mΩ
Nominal Vgs2.6 V
Number of Pins8
Input Capacitance1.765 nF
Power Dissipation3.8 W
Number of Channels1
Number of Elements1
Turn-On Delay Time23 ns
Radiation HardeningNo
Turn-Off Delay Time27 ns
Max Power Dissipation3.8 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)14.9 A
Drain to Source Voltage (Vdss)30 V