SI7888DP-T1-E3
| Part No | SI7888DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 9.4A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
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| Products Specifications | |
|---|---|
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 12.4A, 10V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 9.4A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
