SI8401DB-T1-E3
| Part No | SI8401DB-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 3.6A 2X2 4-MFP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19143
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1286 | |
| 10 | 1.106 | |
| 100 | 1.0722 | |
| 1000 | 1.0383 | |
| 10000 | 0.9932 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6 mm |
| Height | 360 µm |
| Length | 1.6 mm |
| Fall Time | 28 ns |
| Lead Free | Lead Free |
| Rise Time | 28 ns |
| REACH SVHC | Unknown |
| Rds On Max | 65 mΩ |
| Resistance | 65 mΩ |
| Nominal Vgs | -4.5 V |
| Termination | SMD/SMT |
| Number of Pins | 4 |
| Power Dissipation | 1.47 W |
| Threshold Voltage | -4.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 88 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.47 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 65 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | 3.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | -20 V |
