SI8402DB-T1-E1
| Part No | SI8402DB-T1-E1 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 20V 5.3A 2X2 4-MFP |
| Datasheet | Download Datasheet |
| ECAD Module |
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| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6002 mm |
| Height | 355.6 µm |
| Length | 1.5748 mm |
| Fall Time | 145 ns |
| Lead Free | Lead Free |
| Rise Time | 145 ns |
| Rds On Max | 37 mΩ |
| Resistance | 37 MΩ |
| Number of Pins | 4 |
| Power Dissipation | 1.47 W |
| Number of Elements | 1 |
| Turn-On Delay Time | 30 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.47 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 37 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 5.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | 20 V |
