SI8802DB-T2-E1
RoHS

SI8802DB-T2-E1

SI8802DB-T2-E1

Vishay

MOSFET N-CH 8V MICROFOOT

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SI8802DB-T2-E1

Availability: 19039 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time7 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time15 ns
REACH SVHCUnknown
Rds On Max54 mΩ
Resistance54 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Nominal Vgs350 mV
Case/PackageBGA
Number of Pins4
Contact PlatingTin
Power Dissipation500 mW
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Max Power Dissipation900 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance44 mΩ
Gate to Source Voltage (Vgs)5 V
Continuous Drain Current (ID)3.5 A
Drain to Source Voltage (Vdss)8 V
Drain to Source Breakdown Voltage8 V