SIR872ADP-T1-GE3
RoHS

SIR872ADP-T1-GE3

SIR872ADP-T1-GE3

Vishay

MOSFET N-CH 150V 53.7A PPAK SO-8

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SIR872ADP-T1-GE3

Availability: 19752 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time7 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max18 mΩ
Resistance18 MΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Number of Pins8
Contact PlatingTin
Input Capacitance1.286 nF
Power Dissipation6.25 W
Threshold Voltage4.5 V
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)53.7 A
Drain to Source Voltage (Vdss)150 V