SIR872ADP-T1-GE3
| Part No | SIR872ADP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 150V 53.7A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19752
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4878 | |
| 10 | 1.458 | |
| 100 | 1.4134 | |
| 1000 | 1.3688 | |
| 10000 | 1.3093 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Fall Time | 7 ns |
| Lead Free | Lead Free |
| Rise Time | 10 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 18 mΩ |
| Resistance | 18 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 1.286 nF |
| Power Dissipation | 6.25 W |
| Threshold Voltage | 4.5 V |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Max Power Dissipation | 104 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 53.7 A |
| Drain to Source Voltage (Vdss) | 150 V |
