SIR876ADP-T1-GE3
| Part No | SIR876ADP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 100V 40A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
48349
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7549 | |
| 10 | 1.7198 | |
| 100 | 1.6672 | |
| 1000 | 1.6145 | |
| 10000 | 1.5443 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.17 mm |
| Weight | 506.605978 mg |
| Fall Time | 16 ns |
| Lead Free | Lead Free |
| Rise Time | 16 ns |
| REACH SVHC | Unknown |
| Rds On Max | 10.8 mΩ |
| Resistance | 14.5 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Input Capacitance | 1.63 nF |
| Power Dissipation | 5 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28 ns |
| Element Configuration | Single |
| Max Power Dissipation | 62.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 9 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 15.2 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Manufacturer Package Identifier | S17-0173-Single |
| Drain to Source Breakdown Voltage | 100 V |
