SIR882DP-T1-GE3
| Part No | SIR882DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 100V 60A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19851
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.7956 | |
| 10 | 2.7397 | |
| 100 | 2.6558 | |
| 1000 | 2.572 | |
| 10000 | 2.4601 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 506.605978 mg |
| Lead Free | Lead Free |
| REACH SVHC | Unknown |
| Rds On Max | 8.7 mΩ |
| Schedule B | 8541290080 |
| Nominal Vgs | 1.2 V |
| Number of Pins | 8 |
| Input Capacitance | 1.93 nF |
| Power Dissipation | 5.4 W |
| Threshold Voltage | 1.2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Max Power Dissipation | 83 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 8.7 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 60 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
