SIS472DN-T1-GE3
RoHS

SIS472DN-T1-GE3

SIS472DN-T1-GE3

Vishay

MOSFET N-CH 30V 20A 1212-8

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SIS472DN-T1-GE3

Availability: 15560 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time13 ns
Rise Time19 ns
REACH SVHCUnknown
Rds On Max8.9 mΩ
Number of Pins8
Input Capacitance997 pF
Power Dissipation3.5 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time19 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Max Power Dissipation28 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)20 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V