SQ4425EY-T1_GE3
RoHS

SQ4425EY-T1_GE3

SQ4425EY-T1_GE3

Vishay

MOSFET P-CHANNEL 30V 18A 8SOIC

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SQ4425EY-T1_GE3

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Products Specifications
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SOIC
SeriesAutomotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs12 mOhm @ 13A, 10V
Power Dissipation (Max)6.8W (Tc)
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Input Capacitance (Ciss) (Max) @ Vds3630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 18A (Tc) 6.8W (Tc) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C18A (Tc)