
Availability:
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Products Specifications | |
---|---|
Collector-Emitter Breakdown Voltage (Vceo) | 40V |
Power Dissipation (Pd) | 400mW |
Collector Current (Ic) | 500mA |
DC Current Gain (hFE@Ic,Vce) | 50@500mA,2V |
Transition Frequency (fT) | 300MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@500mA,50mA |
Transistor Type | NPN |
Operating Temperature | -55u2103~+150u2103@(Tj) |