IRF135S203
RoHS

IRF135S203

IRF135S203

Infineon

MOSFET N-CH 135V 129A TO263-3

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IRF135S203

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Products Specifications
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesHEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs8.4 mOhm @ 77A, 10V
Power Dissipation (Max)441W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesIRF135S203CT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds9700pF @ 50V
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)135V
Detailed DescriptionN-Channel 135V 129A (Tc) 441W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C129A (Tc)