Availability:
18000
pieces
| Products Specifications | |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220AB |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 58A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Other Names | *IRFB4410 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 5150pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Detailed Description | N-Channel 100V 96A (Tc) 250W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
