| Vgs(th) (Max) @ Id | 4V @ 250µA |
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| Vgs (Max) | ±20V |
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| Technology | MOSFET (Metal Oxide) |
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| Supplier Device Package | IPAK (TO-251) |
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| Series | HEXFET® |
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| Rds On (Max) @ Id, Vgs | 65 mOhm @ 16A, 10V |
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| Power Dissipation (Max) | 110W (Tc) |
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| Packaging | Tube |
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| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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| Other Names | *IRFU5305 |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Through Hole |
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| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
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| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
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| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
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| FET Type | P-Channel |
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| FET Feature | - |
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| Drive Voltage (Max Rds On, Min Rds On) | 10V |
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| Drain to Source Voltage (Vdss) | 55V |
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| Detailed Description | P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251) |
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| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
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