Availability:
15794
pieces
| Products Specifications | |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | IPAK (TO-251) |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 16A, 10V |
| Power Dissipation (Max) | 110W (Tc) |
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Other Names | *IRFU5305 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Detailed Description | P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251) |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
