
Availability:
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Products Specifications | |
---|---|
Collector-Emitter Breakdown Voltage (Vceo) | 40V |
Power Dissipation (Pd) | 350mW |
Collector Current (Ic) | 600mA |
DC Current Gain (hFE@Ic,Vce) | 100@150mA,10V |
Transition Frequency (fT) | 300MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@500mA,50mA |
Transistor Type | NPN |
Operating Temperature | +150u2103@(Tj) |