2N6849
| Part No | 2N6849 |
|---|---|
| Manufacturer | Microsemi |
| Description | MOSFET P-CH 100V 6.5A TO39 |
| Datasheet | Download Datasheet |
| ECAD Module |
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| Products Specifications | |
|---|---|
| Package | Bulk |
| Series | - |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 6.5A (Tc) |
| DriveVoltage(MaxRdsOn | 10V |
| MinRdsOn) | 320mOhm @ 6.5A, 10V |
| RdsOn(Max)@Id | 4V @ 250µA |
| Vgs | 34.8 nC @ 10 V |
| Vgs(th)(Max)@Id | ±20V |
| Vgs(Max) | - |
| InputCapacitance(Ciss)(Max)@Vds | 800mW (Ta), 25W (Tc) |
| FETFeature | -55°C ~ 150°C (TJ) |
| PowerDissipation(Max) | Through Hole |
| OperatingTemperature | TO-39 |
| MountingType | TO-205AF Metal Can |
| SupplierDevicePackage | - |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification | |
