2SJ168
RoHS

2SJ168

2SJ168

Toshiba

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2SJ168

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Products Specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25u00b0C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id-
Vgs (Max)u00b120V
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 10 V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150u00b0C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-59
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product Number2SJ168