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Products Specifications | |
---|---|
Collector-Emitter Breakdown Voltage (Vceo) | 65V |
Power Dissipation (Pd) | 200mW |
Collector Current (Ic) | 100mA |
DC Current Gain (hFE@Ic,Vce) | 220@2mA,5V |
Transition Frequency (fT) | 100MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 650mV@100mA,5mA |
Transistor Type | 2u4e2aPNP |
Operating Temperature | -55u2103~+150u2103@(Tj) |